The systems are designed for semiconductor manufacturing at 7nm or below
Reno Sub-Systems, a developer of radio frequency (RF) matching networks for nanoscale semiconductor manufacturing, has introduced its GenMatch series, which integrates the company’s solid-state electronic variable capacitor (EVC) RF match and Precis generator technologies into a single unit.
The systems have a footprint similar to a match alone and are faster, more repeatable and more reliable, with lower cost of ownership, the company says. They are suitable for etch and deposition applications in semiconductor manufacturing, where level-to-level pulsing and short RF on-times are needed to meet performance requirements.
The platform covers powers from 500W to 10kW and frequencies from 400kHz to 60MHz. The generator supports level-to-level pulsing, while the RF matching network matches impedance on each pulse, meaning every wafer sees the same frequency. Machine learning, using the matching network’s extensive sensor and sampling capability, is incorporated to enhance system performance, the company says.
“Reno has a strong track record of bringing novel RF match technology to market, and the GenMatch is no exception,” said John Voltz, Senior VP of business development at Reno. “The high reliability of our EVC all-solid-state match equals RF generator reliability, making it now economical to put both in the same package. The GenMatch is a true RF power system that delivers plug-and-play performance, a first for plasma processing in advanced semiconductor manufacturing.”
The series also enables detection of fast transients at the output of the RF matching network. These transients may represent micro-arcing in the plasma chamber that the etch or deposition tool would never identify. Reno’s RF generator can then control the power to the chamber to eliminate the micro-arcing.
It also offers the option to fully tune the plasma impedance, compared to standard frequency tuning approaches that can only tune limited plasma impedances, and then only the reactive part of the plasma impedance.