Fab 15 will be TSMC’s third Gigafab (fab with a capacity of more than 100,000 12in wafers per month) and the firm’s second Gigafab to be equipped for 28nm technology.
Construction on a site of 18.4 hectares will be in four phases, and total investment is expected to exceed NT$300bn (US$9.4bn).
The fab will have building area of 430,000m2 and a cleanroom area of approximately 14 football pitches (104,000m2).
TSMC says it will begin moving in equipment for the Phase 1 facility in June 2011, with volume manufacturing of 40nm and 28nm products starting in the first quarter of 2012. More advanced process nodes will be introduced as TSMC’s technology development continues to advance.
TSMC will also continue to expand capacity at its Fab 12 in Hsinchu and Fab 14 in Tainan. The combined capacity of Fab 12 and Fab 14 currently exceeds 200,000 12in wafers per month. This will exceed 240,000 12in wafers per month by the end of 2011.
In common with Fab 12 and Fab 14, Fab 15 will ‘green’ and incorporate environmentally friendly concepts in energy conservation and pollution control, including a process water conservation rate of 85%, reclamation of rainwater, recirculation and reuse of general exhaust heat, and development of solar power generation and LED lighting applications. TSMC says its goal is to reach zero emissions of greenhouse gases.
Dr Morris Chang, chief executive of TSMC, said: “Over the past two decades, TSMC has flourished in the Hsinchu and Tainan science parks, and our groundbreaking for Fab 15 sets the foundation for TSMC to reach new heights.
“As capacity in Fab 15 grows, it will create 8,000 high-quality job opportunities, demonstrating TSMC’s dedication to corporate social responsibility.”