Brolis opens new MBE and laser diode facility

Published: 4-Feb-2013

Aims to become a leading provider of complex epitaxial structures based on arsenides and antimonides

The UK broadcast and digital cinema dealer Molecular beam epitaxy (MBE) specialist and mid-infrared laser diode manufacturer Brolis Semiconductors has officially opened a new MBE and laser diode production facility. The facility was opened by the President of Lithuania, Dalia Grybauskaite.

Brolis Semiconductors was established in 2011 by the brothers Augustinas, Kristijonas and Dominykas Vizbaras, who specialise in long-wavelength semiconductor lasers and MBE. It aims to become a leading provider of complex epitaxial structures based on arsenides and antimonides.

You may also like