Toshiba builds 15,700m2 cleanroom
Toshiba has completed construction of the building for a new 300mm fab at its Oita Operations in Kyushu, Japan. Construction for the new fab began in June 2003 and the new fab is scheduled to start production in autumn 2004. A e1.47bn investment programme for the period 2003 to 2007 will bring production capacity to 12,500 wafers a month. This could be further expanded if necessary, up to a capacity of 17,500 wafers a month, with further investment. The 300mm Oita fab has a site area of 24,100m2 with 15,700m2 of cleanroom space. The company plans for the facility to be the first in the world to deploy 65nm process and design technologies. In the future, Toshiba expects the new fab to lead the industry in introducing 45nm process technology and applying it to system-on-chip (SoC) devices. Target applications include digital consumer electronics, mobile products and broadband networks. The new Oita fab is the first of two 300mm-wafer facilities that Toshiba plans to construct. The second, to be built at Yokkaichi Operations, also in Japan, will produce NAND flash memory.
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